NVMFD5875NLT1G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVMFD5875NLT1G

Description:

MOSFET 2N-CH 60V 7A SO8FL

Stock:

3377

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.19

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

60V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

20nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

540pF @ 25V

On resistance (maximum) for different Ids and Vgs

33 mΩ @ 7.5A,10V

Power - maximum

3.2W

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerTDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载NVMFD5875NLT1G.pdf

NVMFD5875NLT1G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3377,Price reference "real-time change" China/Hongkong。 NVMFD5875NLT1G package/specs, Download NVMFD5875NLT1G、Datasheet。